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YZPST-STW20NM60
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YZPST-STW20NM60

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YZPST-STW20NM60
YZPST-STW20NM60.pdf
YANGZHOU POSITIONING TECH CO Power thyristor and diode parts 20200518.pdf
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DESCRIPTION
http://www.youtube.com/channel/UCZ3mV8GmGNcX4WcYEoWX-_g/featured


Features

High ruggedness

Low RDS(ON) (Typ 0.22Ω)@VGS=10V

Low Gate Charge (Typ 84nC)

Improved dv/dt Capability

100% Avalanche Tested

Application: UPS, Charge, PC Power ,Inverter

General Description
This power MOSFET is produced with advanced technology of Promising Chip.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDSS

Drain to source voltage

600

V


ID

Continous drain current(@Tc=25℃)

20*

A

Continous drain current(@Tc=100℃)

12*

A

IDM

Drain current pulsed

78

A

VGS

Gate to source voltage

±30

V

EAS

Single pulsed avalanche energy

1284

mJ

EAR

Repetitive pulsed avalanche energy

97

mJ

dv/dt

Peak diode recovery dv/dt

5

V/ns


PD

Total power dissipation(@Tc=25℃)

42.3

W

Derating factor above 25℃

0.32

W/℃

TSTG,TJ

Operating junction temperature & storage temperature

-55~+150

℃

TL

Maximum lead temperature for soldering purpose,1/8 from case for 5second

300

℃


*Drain current is limited by junction temperature Thermal characteristics:

Symbol

Parameter

Value

Unit

Rthjc

Thermal resistance , Junction to case

3.1

℃/W

Rthja

Thermal resistance , Junction to ambient

49

℃/W


Source to drain diode ratings characteristics:

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Is

Continuous source current


Integral reverse p-n Junction
diode in the MOSFET




20

A

ISM

Pulsed source current



80

A

VSD

Diode forward voltage drop

IS =20A VGS = 0V



1.3

V

trr

Reverse recovery time


IS =20A VGS = 0V
dIF/dt = 100A/us



494


ns

Qrr

Reverse recovery charge


7.3


uC

YZPST can provide Following List of MOSFET

Rds(on) mΩ(typ) @Vgs= Qg
MPN Package Type VDS (V) Vgs Ids Pd Vgs(th) (nC) Qgs Qgd
（Type） (V) (A) (W) max (V) 10V 4.5V 2.5V (4.5 (nC) (nC)
2301 SOT23 P -20V ±12 -3A 1W -1V 64mΩ 89mΩ 3.3 0.7 1.3
2302 SOT23 N 20V ±10 2.9A 1W 1.2V 30mΩ 37mΩ 4 0.65 1.2
2305 SOT23 P -20V ±12 -4.8A 1.7W -1V 45mΩ 60mΩ 7.8 1.2 1.6
3400 SOT23 N 30V ±12 5.8A 1.4W 1.4V 28mΩ 31mΩ 45mΩ 9.5 1.5 3
3401 SOT23 P -30V ±20 -4.2A 1.2W -1.3V 50mΩ 64mΩ 95mΩ 9.5 2 3
10N03 SOP8 N 30V ±20 10A 2.5W 3V 7.5mΩ 13 5.5 3.5
20N03 TO-252 N 30V ±20 20A 60W 3V 28mΩ 15 2.9 3.2
30P03 SOP8 P 30V ±20 -30A 60W 3V
50N03 TO-252 N 30V ±20 50A 60W 3V 5.9mΩ 23 7 4.5
60N03 TO-252 N 30V ±20 60A 46.3W 1.8 V 3.3mΩ 20 6 2
80N03 TO-252 N 30V ±20 80A 83W 4.8mΩ 51 14 11
100N03 TO-252 N 30V ±20 100A 110W 3V 4mΩ 100 25 45
60N04 TO-252 N 40V ±20 60A 65W 1.9V 8.5mΩ 12.5mΩ 29 4.5 6.4
4606 SOP-8 N+P
3N06 SOT-223 N 60V ±20 3A 1.7W 1.4V 105mΩ （MAX） 125mΩ （MAX） 6 1 1.3
15P06 TO-252 P
20N06 TO-252 N 60V ±20 20A 40W 3V 37mΩ 12 4.1 4.5
25P06 TO-252 P -60V ±20 -25A 90W -3.5V 45mΩ 46 9.5 10.5
30N06 TO-220/F N 60V ±20 30A 120W 4V 19mΩ 34 9.6 10.5
50N06 TO-252 N 60V ±20 50A 120W 4V 19mΩ 34 9.6 10.5
110N06 TO-220/F N 60V ±20 110A 120W 2V 5.2mΩ 113 14 54
G1002 TO-92 N 100V ±20 2A 1.1W 2.5V 185mΩ 5.2 0.75 1.4
5N10 SOT223 N 100V ±20 5A 3W 3V 135mΩ 16 3.2 4.7
14N10 TO-252 N 100V ±20 14A 28W 2.6V 85mΩ 11 1.9 2.8
30N10 SOP8 N 100V ±20 30A 85W 2.5V 24mΩ 39 8 12
11N10 TO-252 N 100V ±20 11A 28W 2.6V 85mΩ 11 1.9 2.8
12P10 TO-252 P -100V ±20 -12A 40W -3V 170mΩ 25 5 7
5N20 TO-252 N 200V ±20 5A 30W 2.5V 520mΩ 12 2.5 3.8
2N60 TO-252/251 N 600V ±30 2A 45W 4V 5Ω 9 1.6 4.3
2N60 TO- N 600V ±30 2A 45W 4V 5Ω 9 1.6 4.3
2N65 TO-252 N 650V ±30 2A 45W 4V 5Ω 9 1.6 4.3
4N60 TO- N 600V ±30 4A 100W 4V 3Ω 5 2.7 2
4N60 TO-252 N 600V ±30 4A 33W 4V 3Ω 5 2.7 2
5N60 TO-220 N 600V ±30 5A 100W 4V 2.5Ω 16 3 7.2
6N65 TO- N 650V ±30 6A 140W 4V 1.8Ω 29 7 14.5
8N60 TO- N 600V ±30 8A 140W 4V 1.0Ω 45 6.8 18
12N65 TO- N 650V ±30 12A 4V 0.8Ω 42 8.6 21
IRF640 TO- N 200V ±30 18A 43W 4V 0.14Ω 40 6 22
IRF740 TO- N 400V ±30 10.5A 45.5W 4V 0.43Ω 30 4 15
IRF840 TO- N 500V ±30 9A 45.5W 4V 0.65Ω 30 4 15


For more information about MOSFET please download the PDF file above named " YANGZHOU POSITIONING TECH CO  Power  thyristor and diode parts "

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