Symbol

Parameter

Test conditions

Value

Unit

VDS

Drain-Source Voltage

1200

V

ID

Continuous Drain Current

Tc=25°C

Tc=100°C

74

52

A

IDM

Peak Drain Current

Pulse width tp  limited by Tjmax

150

A

VGSmax

Gate-Source Voltage

-8/+22

V

VGSop

Recommend Gate-Source Voltage

-4/+ 18

V

Ptot

Power Dissipation

Tc=25°C

Tc=100°C

312

156

W

Tj

Operating Junction Temperature

-40~175

°C

Tstg

Storage Temperature

-40~175

°C

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

V(BR)DSS

Drain-Source Breakdown Voltage

ID=100μA, VGS=0V

1200

V

IDSS

Zero Gate Voltage Drain Current

VDS=1200V, VGS=0V

1

μA

IGSS

Gate-Source Leakage Current

VDS=0V, VGS=18V

250

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=10mA Tj=25°C

Tj=175°C

2

2.6

2.0

4

V

RDS(on)

Drain-Source On-State Resistance

VGS=18V, ID=40A Tj=25°C

Tj=175°C

37

47

mΩ