YZPST-RD100N26C
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YZPST-RD100N26C

100V 30mΩ N-Ch Power MOSFET
YZPST-RD100N26C
Features
Low RDS(ON)
Low Gate Charge
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
Halogen-free and RoHS-compliant
Applications
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Motor Drivin in Power Tool, E-vehicle, Robotics
YZPST-RD100N26C TO-263-3L
description1
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DESCRIPTION


100V 30mΩ N-Ch Power MOSFET
YZPST-RD100N26C
Features
Low RDS(ON)
Low Gate Charge
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
Halogen-free and RoHS-compliant
Applications
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Motor Drivin in Power Tool, E-vehicle, Robotics
YZPST-RD100N26C TO-263-3L

Product Summary

Parameter

Typ.

Unit

VDS

100

V

VGS(th)

1.9

V

ID  (@ VGS = 10V) (1)

26

A

RDS(ON)  (@ VGS = 10V)

30

Absolute Maximum Ratings (@ TA  = 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

VDS

100

V

Gate-to-Source Voltage

VGS

±20

V

Continuous Drain Current (1)

TC = 25°C

ID

26

A

TC  = 100°C

16

Pulsed Drain Current (2)

IDM

70

A

Avalanche Current (3)

IAS

14

A

Avalanche Energy (3)

EAS

10

mJ

Power Dissipation (4)

TC = 25°C

PD

50

W

TC  = 100°C

20

Junction & Storage Temperature Range

TJ , TSTG

-55 to 150

°C

TO-263-3L Package Information

YZPST-RD100N26C Package

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