YZPST-R03N120TP
|
BVDSS |
RDS(ON),typ. |
ID |
|
1200V |
6Ω |
3.0A |
P/N: YZPST-R03N120TP
1200VN-chPlanar MOSFET
General Features
RoHS Compliant
RDS(ON),typ.=6Ω@VGS=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
Applications
Adaptor
Charger
SMPS Standby Power
Lead Free package and Finish
|
BVDSS |
RDS(ON),typ. |
ID |
|
1200V |
6Ω |
3.0A |
Absolute Maximum Ratings TC=25℃ unless otherwise specified
|
Symbol |
Parameter |
R03N120TP |
Unit |
|
VDSS |
Drain-to-Source Voltage |
1200 |
V |
|
VGSS |
Gate-to-Source Voltage |
±30 |
|
|
ID |
Continuous Drain Current |
3.0 |
A |
|
IDM |
Pulsed Drain Current at VGS=10V |
12 |
|
|
EAS |
Single Pulse Avalanche Energy |
100 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt[3] |
5.0 |
V/ns |
|
PD |
Power Dissipation |
75 |
W |
|
Derating Factor above 25℃ |
0.6 |
W/℃ |
|
|
TL |
Soldering Temperature Distance of 1.6mm from case for 10 seconds |
300 |
℃ |
|
TJ& TSTG |
Operating and StorageTemperatureRange |
-55 to 150 |
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
|
Symbol |
Parameter |
R03N120TP |
Unit |
|
RθJC |
Thermal Resistance, Junction-to-Case |
1.67 |
℃/W |
|
RθJA |
Thermal Resistance, Junction-to-Ambient |
62 |
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