YZPST-R80N65HTNF
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YZPST-R80N65HTNF

P/N: YZPST-R80N65HTNF
N-Channel Power MOSFET
Features
Advanced technology
Excellent conduction and switching loss
Excellent stability and uniformity
Fast and soft antiparallel diode
Applications
Induction converters
Uninterruptible power supplies
description1
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description

P/N: YZPST-R80N65HTNF
N-Channel Power MOSFET
Features
Advanced technology
Excellent conduction and switching loss
Excellent stability and uniformity
Fast and soft antiparallel diode
Applications
Induction converters
Uninterruptible power supplies
Key Performance Parameters

Parameter

Value

Unit

VCES, min @ 25 °C

650

V

Maximum junction temperature

175

°C

IC, pulse

320

A

VCE(sat), typ @ VGE=15 V

1.35

V

Qg

224

nC

Marking Information

Product Name

Package

Marking

R8 0N65HTNF

TO247

R80N65HTN

Package & Pin Information

YZPST-R80N65HTNF

Package Information

R80N65HTNF Package

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